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Phonons in potassium-doped graphene: The effects of electron-phonon interactions, dimensionality, and adatom ordering

机译:钾掺杂石墨烯中的声子:电子-声子相互作用,尺寸和原子序的影响

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摘要

Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G peak hardens and narrows with increasing doping, analogous to the trend seen in graphene doped via the field effect. At high dopings, beyond those accessible by the field effect, the G peak strongly softens and broadens. This is interpreted as a dynamic, nonadiabatic renormalization of the phonon self-energy. At dopings between the light and heavily doped regimes, we find a robust inhomogeneous phase where the potassium coverage is segregated into regions of high and low density. The phonon energies, linewidths, and tunability are notably very similar for one- to four-layer potassium-doped graphene, but significantly different to bulk potassium-doped graphite.
机译:石墨烯声子通过添加钾原子而作为电子掺杂的函数进行测量。在低掺杂状态下,面内碳G峰随着掺杂的增加而变硬和变窄,类似于通过场效应掺杂的石墨烯中的趋势。在高掺杂下,G峰会强烈地软化和展宽,超出了场效应可及的范围。这被解释为声子自能量的动态,非绝热重整化。在轻掺杂和重掺杂体系之间的掺杂中,我们发现了一个稳健的不均匀相,其中钾的覆盖范围被分为高密度区域和低密度区域。对于一层至四层掺钾石墨烯,声子能量,线宽和可调谐性非常相似,但与本体掺钾石墨显着不同。

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