LOW-TEMPERATURE GROWTH OF AlAs/GaAs HETEROSTRUCTURES BY MODULATED MOLECULAR BEAM EPITAXY.

摘要

Modulated molecular beams phase-locked to reflection high-energy electron diffraction (RHEED) oscillations have been used to grow low-temperature GaAs quantum wells (QW) confined by AlAs/GaAs short-period superlattices (SL). Two different phase-locked modulation growth modes were attempted and compared. In the first mode, only the As//4 beam was interrupted periodically in-phase with the monolayer growth cycle. In the second one, both Ga (or Al) and As//4 incident beams were modulated synchronously with the monolayer growth cycle. In the second one, both Ga (or Al) and As//4 incident beams were modulated synchronously with the monolayer period. Both growth methods were seen to produce high-optical-quality QW and SL's layers at low-growth temperatures (T//s approximately equals 400 degree C).