Enhanced photoluminescence of rare-earth doped films prepared by off-axis pulsed laser deposition

摘要

Alternate pulsedlaserdeposition from the host (Al2O3) and dopant (Er, Yb) targets has been used to prepare artificially nanostructured films in which the rareearth ion–ion separation is controlled in the nanometer scale in order to control energy transfer between ions. One series of films was prepared in the standard on-axis configuration, i.e. a static substrate being centred with respect to the plasma expansion axis. A second series of films was prepared by rotating the substrate with respect to a shifted axis parallel to the plasma expansion one (off-axis configuration). The latter configuration leads to films with enhanced thickness and Er related photoluminescence intensity uniformity. More interestingly, the Er related photoluminescence lifetime in as-grown films increases up to 2.5 ms, which is much higher than the maximum value of 1 ms obtained for the on-axis configuration films. This enhancement is discussed in terms of a decrease of defect density when using the off-axis configuration.