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Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

机译：远程等离子体化学气相沉积氮氧化硅薄膜：介电性能

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6 pages.-- PACS: 81.15.Gh; 52.75.Rx; 77.55.+f;ud73.40.Qv; 68.55.Nq

机译：6页。-PACS：81.15.Gh; 52.75.Rx; 77.55。+ f; ud73.40.Qv; 68.55

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Hernández-Vélez M.; Sánchez Olga; Fernández-Gutiérrez F.; Falcony C.; Martínez Duart J. M.;
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年度 1998
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1. Hot-Carrier Immunity of Polycrystalline Silicon Thin Film Transistors Using Silicon Oxynitride Gate Dielectric Formed with Plasma-Enhanced Chemical Vapor Deposition [J] . Masafumi Kunii Japanese journal of applied physics . 2009,第11期

机译：使用等离子增强化学气相沉积法形成的氮氧化硅栅介质的多晶硅薄膜晶体管的热载流子抗扰性
2. Effects of various substrate materials on microstructural and optical properties of amorphous silicon oxynitride thin films deposited by plasma-enhanced chemical vapor deposition [J] . Hang Liangyi, Liu Weiguo, Xu Junqi, Thin Solid Films . 2020,第Sepa1期

机译：各种衬底材料对等离子体增强化学气相沉积沉积的非晶硅氮氧化物薄膜微观结构和光学性能的影响
3. Hard silicon carbonitride thin‐film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical,and mechanical properties of deposited films [J] . Wrobel Aleksander M., Uznanski Pawel Plasma processes and polymers . 2021,第4期

机译：用氨基硅烷和硅氮烷前体远程氢等离子体化学气相沉积硬硅碳氮化型薄膜涂层。 2：沉积薄膜的物理，光学和机械性能
4. Remote plasma enhanced-metal organic chemical vapor deposition of zirconium oxide/silicon oxide alloy, (ZrO_2)_x-(SiO_2)_(1-x)(x<=0.5), thin films for advanced high-k gate dielectrics [C] . D. Wolfe, K. Flock, R. Therrien, Symposium on Ultrathin SiO_2 and High-K Materials for ULSI Gate Dielectrics held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：氧化锆/氧化硅合金的远程等离子体增强金属有机化学气相沉积，（ZrO_2）_x-（SiO_2）_（1-x）（x <= 0.5），用于高级高k栅极电介质的薄膜
5. Deposition of epitaxial silicon/silicon-germanium/germanium and novel high-k gate dielectrics using remote plasma chemical vapor deposition. [D] . Chen, Xiao. 2003

机译：使用远程等离子体化学气相沉积沉积外延硅/硅锗/锗和新型高k栅极电介质。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

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7. Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition [O] . Zhenghao Gan, Changzheng Wang, Zhong Chen 2018

机译：等离子体增强化学气相沉积沉积氮化硅和氮氧化硅薄膜的材料结构和机械性能

Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

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