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Three- and two-dimensional topological insulators in Pb2Sb2Te5, Pb2Bi2Te5, and Pb2Bi2Se5 layered compounds

机译:Pb2Sb2Te5,Pb2Bi2Te5和Pb2Bi2Se5层状化合物中的三维拓扑绝缘体

摘要

The electronic structure of ternary compounds Pb2Sb2Te5, Pb2Bi2Te5, and Pb2Bi2Se5, which have a layered structure that consists of nine-layer atomic blocks separated by van der Waals gaps, has been theoretically studied. It has been shown that all studied compounds are three-dimensional topological insulators. The possibility of the existence of a two-dimensional topological insulator has been found in ultrathin (0001) Pb2Sb2Te5 and Pb2Bi2Te5 films. Oscillations of Pb2Bi2Te5 films. Oscillations Z2 topological invariant with the film thickness have been observed in the latter compound. © 2011 Pleiades Publishing, Ltd.
机译:从理论上研究了三元化合物Pb2Sb2Te5,Pb2Bi2Te5和Pb2Bi2Se5的电子结构,该结构由由范德华间隙隔开的九层原子块组成。已经表明,所有研究的化合物都是三维拓扑绝缘体。在超薄(0001)Pb2Sb2Te5和Pb2Bi2Te5薄膜中发现了存在二维拓扑绝缘体的可能性。 Pb2Bi2Te5膜的振荡。在后一种化合物中观察到了Z 2拓扑随膜厚的振荡。 ©2011 Pleiades Publishing,Ltd.

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