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Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

机译:Yb浓度对CdTe:Ge:Yb共掺杂晶体的电阻率和寿命的影响

摘要

The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that theudeffect of Yb concentration is crucial for accurate electrical compensation. It is also demonstratedudthat the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be audpromising way to obtain semiinsulating CdTe crystals with good transport properties. Highudresistivity 5 10ud9ud cm and lifetime 9 s were obtained, thus confirming the beneficial effect ofudrare-earth doping
机译:报道了CdTe:Ge:Yb晶体的电阻率和电子寿命,表明Yb浓度的影响对于精确的电补偿至关重要。还证明了,将CdTe与Ge作为深施主,与Yb作为稀土元素进行共掺杂可能是获得具有良好传输性能的半绝缘CdTe晶体的一种有希望的方式。获得了高的电阻率5 10 ud9 ud cm和寿命9 s,因此证实了稀土掺杂的有益作用

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