Strain distribution and structural characterization of short period GaAsGaP strained superlattices by raman and X-Ray scattering

摘要

Raman scattering is used to study structural properties of strained-layer GaAsGaP short period superlattices grown on GaAs substrates. Different thicknesses of the constituent layers and also the effect of different types of buffer layers are studied. From the energy and width of the confined optical phonons observed, information about strain accomodation in the layers, strain relaxation and, in general, about structural quality is achieved. © 1990.