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>Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources
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Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources
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机译:使用单能质子和中子辐射源比较6T和8T SRAM IC的软错误率
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摘要
We present experimental results of soft errors produced by proton and neutron irradiation of minimum-size six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories produced with 65 nm CMOS technology using an 18 MeV proton beam and a neutron beam of 4.3–8.5 MeV. All experiments have been carried out at the National Center of Accelerators (CNA) in Seville, Spain. Similar soft error rate levels have been observed for both cell designs despite the larger area occupied by the 8T cells, although the trend for multiple events has been higher in 6T.
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机译:我们展示了使用65 Mem CMOS技术,使用18 MeV质子束和中子通过最小尺寸的六晶体管(6T)和八晶体管(8T)位单元的质子和中子辐照产生的软错误的实验结果。光束4.3–8.5 MeV。所有实验均在西班牙塞维利亚国家加速器中心(CNA)进行。尽管8T单元占据了较大的面积,但两种单元的设计都观察到了相似的软错误率水平,尽管6T中多个事件的趋势更高。
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