Diffusion and microstructures induced by excimer laser irradiation in Ge-Sb thin film bilayers

摘要

Nanosecond laser pulses are used to irradiate Ge-Sb thin bilayer films. Time-resolved reflectivity measurements are used to follow kinetically the laser-induced process. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) are used to perform depth profile and microstructure analyses. Diffusion of the elements is observed upon irradiation. It occurs within the liquid phase and is interfacially initiated. The calculated diffusion coefficients follow an Arrhenius-like law as a function of the laser energy density. Amorphous phases together with some crystalline segregation are observed. © 1990.