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>Sub-10 nm resistless nanolithography for directed self-assembly of block copolymers
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Sub-10 nm resistless nanolithography for directed self-assembly of block copolymers
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机译:用于嵌段共聚物定向自组装的亚10 nm无阻纳米光刻
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摘要
The creation of highly efficient guiding patterns for the directed self-Assembly of block copolymers by resistless nanolithography using atomic force microscopy (AFM) is demonstrated. It is shown that chemical patterns consisting of arrays of lines defined on a brush layer by AFM allow the alignment of the blocks of lamella-forming polymers. The main advantage of this method relies on the capability to create high-resolution (sub-10 nm line-width) guiding patterns and the reduction of the number of process steps compared to the state-of-the-Art methods for creating guiding patterns by chemical surface modification. It is found that the guiding patterns induce the block alignment very efficiently, allowing the achievement of a density multiplication factor of 7 for block copolymers of 14 nm half-pitch, which is attributed to the combined effect of topographical and chemical modification.
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