Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations

摘要

We model currently fabricated industrial-type screen-printed boron-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces the experimental results precisely and allows us to predict both the efficiency gain after specific cell improvements and the associated thermal budgets. Separating the resistive losses (evaluated for various contributions) from the recombination losses (evaluated in different device regions) allows us to forecast the improvements of the emitter and the rear side necessary such that the recombination losses in the base dominate. We predict that to increase cell efficiency considerably beyond 19.7 %, the base material needs to be improved.