We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.
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机译：我们通过电化学刻蚀从n型硅片上分离出（34±2）μm厚的大孔硅层。孔隙率是p ＝（26.2±2.4）％。我们使用离子注入来选择性地掺杂大孔硅层的外表面。无需遮盖表面。在植入过程中，孔是开放的。我们制造了一个大孔的硅太阳能电池，在正面有一个注入的硼发射极，在背面有一个注入的磷区域。短路电流密度为34.8 mA cm-2，开路电压为562 mV。填充率为69.1％时，电池可实现13.5％的能量转换效率。
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