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Mesoporous tin-doped indium oxide thin films: Effect of mesostructure on electrical conductivity

机译:介孔掺锡氧化铟薄膜:介孔结构对电导率的影响

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摘要

We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO) thin films via dip-coating. Two poly(isobutylene)-b- poly(ethyleneoxide) (PIB-PEO) copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000) are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20-25 and 35-45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.
机译:我们提出了一种通过浸涂制备介孔掺锡氧化铟(ITO)薄膜的通用方法。两种分子量显着不同的聚异丁烯-b-聚环氧乙烷(PIB-PEO)共聚物(分别表示为PIB-PEO 3000和PIB-PEO 20000)用作模板,并与非模板膜进行比较以阐明模板尺寸对结晶的影响,因此对介孔ITO膜的电化学性能的影响。在500°C退火后,获得透明的介孔导电涂层。这些涂层在约100 nm的厚度下具有0.5 cm的电阻率。通过在还原气氛下退火,将电导率提高一个数量级。两种类型的PIB-PEO嵌段共聚物产生的中孔的面内直径为20-25和35-45 nm,后者还具有相应的较厚的孔壁。阻抗测量结果表明,用模板制备的薄膜产生较大的中孔时,电导率明显更高。由于初级纳米粒子的尺寸相同,因此电导率提高归因于较高的导电路径横截面。普鲁士蓝以电化学方式沉积在薄膜内,从而证实了其孔的可及性和作为电极材料的功能。

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