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Electrical and Optical Properties of ZnO:Al Film prepared on Polyethersulfone Substrate by RF Magnetron Sputtering

机译:射频磁控溅射在聚醚砜基板上制备的ZnO:Al薄膜的电学和光学性质

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摘要

[[abstract]]This study investigates the process parameter effects on the electrical and optical properties of AZO (ZnO:Al) thin film using radio frequency (RF) magnetron sputtering on flexible PES (polyethersulfone) substrates. The process parameters include RF power, working pressure and substrate bias. Results show that RF power was increased to promote the crystalline quality and decrease AZO thin film resistivity. However, when the RF power was increased to 200W the AZO thin film crystalline quality and conductivity became worse. Along with the working pressure increase, regarding the AZO thin film crystalline quality, conductivity and transmittance has the promotion. Substrate bias added has not help to increasescrystalline quality, electrical and optical properties of film. At a 150WRF power, 670MPa working pressure and substrate bias 0V, the AZO thin film with a better electrical resistivity of 1.51×10−2 cm and an average optical transmittance of above 90% in the visible region is obtained.
机译:[[摘要]]这项研究研究了在柔性PES(聚醚砜)基板上使用射频(RF)磁控溅射对AZO(ZnO:Al)薄膜的电学和光学性能的影响。工艺参数包括RF功率,工作压力和基板偏压。结果表明,增加射频功率可提高晶体质量并降低AZO薄膜电阻率。然而,当RF功率增加到200W时,AZO薄膜的晶体质量和导电性变差。随着工作压力的增加,关于AZO薄膜的结晶质量,电导率和透射率都有提升。添加的基材偏压无助于提高薄膜的晶体质量,电学和光学性能。在150WRF的功率,670MPa的工作压力和0V的基板偏置下,可获得具有1.51×10-2 cm的更好电阻率和在可见光区域中平均透光率超过90%的AZO薄膜。

著录项

  • 作者

    Chen M. Z.;

  • 作者单位
  • 年度 2012
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

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