導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性之影響

摘要

[[abstract]]The effect of band-offset ratio on the characteristics of the 405-nm InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-offset ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Compared to a band-off-set ratio of 3/7, which was widely accepted before the year 2002, the laser performance is better and the distribution of carrier concentration in the quantum wells becomes more uniform when the band-offset ratio is 7/3, which is accepted by most researchers recently. Several formulae are derived from simulations, which can be used as a handy tool to calculate the thickness of InxGa1-xN well layer in the 405-nm laser structure for specific indium compositions of InxGa1-xN well alyer and InyGa1-yN barrier layer.