The Comparison of Lithium Doping Impact to Solution Processed ZnO/InZnO Thin Film Transistors' Characteristics

摘要

[[abstract]]We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.