[[abstract]]Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.
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机译：[[摘要]]这里我们研究了使用Al / Cr复合薄膜作为中间层通过RF磁控溅射制备的氧化铟锡（ITO）涂层玻璃中玻璃与玻璃阳极键合的条件和机理。 。实验结果表明，结合强度随结合温度，结合电压和铝膜厚度的增加而增加。发现阳极键合的最佳实验参数是300nm的Al膜厚度，300°C的键合温度和700V的键合电压。键合相内的氧含量随着温度的升高而增加而铝含量降低焊接过程中的电压和电压。根据EDS分析结果，提出主要的键合机理归因于以下化学反应：4Na + + 4e-→4Na，xAl + yO2-→Al x O y + 6e-，x = 2，y = 3。
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