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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

机译：Si / SiO2中间能隙界面态与p型硅中的硅氧超晶格相关的深能级之间的比较

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status: published

机译：状态：已发布

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Simoen Eddy; Jayachandran Suseendran; Delabie Annelies; Caymax Matty; Heyns Marc;
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年度 2016
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正文语种 en
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专利

1. Deep levels in silicon-oxygen superlattices [J] . Simoen E., Jayachandran S., Delabie A., Semiconductor science and technology . 2016,第2期

机译：硅氧超晶格中的深层
2. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities [J] . Stegemann Bert, Gad Karim M., Balamou Patrice, Applied Surface Science . 2017,第Feba15期

机译：晶体硅晶片上的超薄氧化硅层：具有低缺陷密度的化学突变SiO2 / Si界面方面先进氧化技术的比较
3. Effect of point defects on copper-related deep levels in p-type Czochralski silicon [J] . Weiyan Wang, Deren Yang, Xuegong Yu, Journal of Applied Physics . 2007,第7期

机译：点缺陷对p型直拉硅中与铜有关的深能级的影响
4. Passivation of Deep Levels at the SiO2/SiC Interface [C] . A. F. Basile, J. Rozen, X. D. Chen, Wide-bandgap semiconductor materials and devices 11 -and-state-of-the-art program on compound semiconductors 52 (SOTAPOCS 52) . 2010

机译：SiO2 / SiC界面处的深层钝化
5. ELECTRICAL CHARACTERIZATION OF DEEP LEVEL IMPURITIES IN SEMICONDUCTOR JUNCTIONS: SCHOTTKY BARRIERS OF HAFNIUM ON INDIUM DOPED P-TYPE SILICON. [D] . BEGUWALA, MOIZ MULLA ENAYATALI. 1975

机译：半导体结中深层杂质的电学表征：掺D的P型硅上的肖特基势垒。
6. Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating [O] . Dirk König, Daniel Hiller, Noël Wilck, 2018

机译：本征超小纳米级硅通过SiO2 / Si3N4涂层变成n / p型
7. First comparison of electric field induced second harmonic of near-infrared femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane [O] . G. P. Nyamuda, E. G. Rohwer, C. M. Steenkamp, 2011

机译：电场的首先比较诱导硅膜的Si / SiO2界面产生的反射和传输中的近红外飞秒激光脉冲的第二次谐波
8. Comparison of Dominant Electron Trap Levels in n-Type and p-Type GaAsN Using Deep-Level Transient Spectroscopy [R] . Johnston, S. W. 2005

机译：用深能瞬态光谱法比较n型和p型GaasN中的显性电子陷阱能级

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

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