A silicon-controlled rectifier-based ESD protection for MEMS – Merits and challenges

摘要

A silicon-controlled rectifier (SCR) is presented as an ESD protection device formicroelectromechanical systems (MEMS) in a MEMS-on-CMOS process flow. Measurements on SiGe MEMSdevices have been performed and the SCR is shown to provide the Class0 MEMS with protection levels up to5.5kV HBM. The effect of the MEMS capacitance on the SCR robustness during ESD is investigated. Throughsimulations and measurements, the scope of the proposed ESD protection scheme has been evaluated. Currentovershoots