N-doped, p-type ZnO thin films have been grown by plasma-assisted metal-organic chemical vapor deposition method. The results under 2 optimized growth conditions included a resistivity of 1.72 Omega cm, a Hall mobility of 1.59 Cm-2/V s, and a hole concentration of 2.29x 10(18) cm(-3) and were consistently reproducible. A N-related free-to-neutral-acceptor emission and an associated phonon replica were evident in room temperature photoluminescence spectra, from which the N acceptor energy level in ZnO was estimated to be 180 meV above the valence band maximum. (c) 2006 Elsevier B.V. All rights reserved.
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