A Hard Switching VIENNA Boost Converter for Characterization of AlGaN/GaN/AlGaN Power DHFETs

摘要

A high frequency, hard switching boost converter (VIENNA topology) was constructed for characterizingnew power AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors (DHEFTs) under operatingconditions. This converter enables us to accurately measure the, in power circuit design, mostimportant device parameters (dynamic on-resistance Rdyn, gate charge Qg, Miller charge Qgd, thresholdvoltage Vth, switching times ton and toff, figure of merit FOM, …). A high accuracy is achieved by usingthe right measurement methods combined with an in-house developed accuracy/resolutionimprovementcircuit. Measurements of the dynamic on-resistance, together with gate charge measurementswere performed on AlGaN/GaN/AlGaN DHEFT prototypes, showing good results.