A 96 Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

摘要

III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: $R_{rm ON} ast Q_{G}$ of 2.5 $Omegacdothbox{nC}$ is obtained at $V_{rm DS} = hbox{140 V}$. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.