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Design and assessment of a robust voltage amplifier with 2.5 GHz GBW and >100 kGy total dose tolerance

机译:设计和评估具有2.5 GHz GBW和> 100 kGy总剂量容差的稳健电压放大器

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摘要

A differential voltage amplifier with a gain-bandwidth product of 2.5Ghz and using adaptive biasing has been designed in a standard CMOS technology and assessed under radiation and temperature variations. The principle used in this ASIC will be employed in the design of a Gbps TIA with improved tolerance for γ-irradiation and temperature for an optical instrumentation (LIDAR) receiver aiming at operation in harsh environments. The voltage amplifier was tested under gamma radiation and features a gain degradation of merely 4.5% up to a total dose of 100kGy. In order to verify the radiation effects on the IC, the threshold voltage shift of the separate transistors has been investigated. Temperature characterization has shown that the amplifier features a reduction of the voltage gain by only 5.6% for a temperature range of -40 till 130 °C.
机译:增益带宽乘积为2.5Ghz并使用自适应偏置的差分电压放大器已在标准CMOS技术中进行了设计,并在辐射和温度变化的情况下进行了评估。该ASIC中使用的原理将用于Gbps TIA的设计中,以提高针对恶劣环境下工作的光学仪器(LIDAR)接收器对γ辐射和温度的耐受性。电压放大器在伽马射线辐射下进行了测试,在总剂量为100kGy时,增益衰减仅为4.5%。为了验证辐射对IC的影响,已经研究了独立晶体管的阈值电压偏移。温度特性表明,在-40至130°C的温度范围内,放大器的电压增益仅降低5.6%。

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