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Effect of boron doping in the microwave surface resistance of neutron irradiated melt-textured Y(1.6)Ba(2.3)Cu(3.3)O(7-x) samples

机译:硼掺杂对中子辐照的Y(1.6)Ba(2.3)Cu(3.3)O(7-x)样品的微波表面电阻的影响

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摘要

We report on the microwave surface resistance of melt-textured Y(1.6)Ba(2.3)Cu(3.3)O(7-x) samples, doped with different amount of B2O3 and, subsequently, irradiated by thermal neutrons at the fluence of 1.476 x 10^17 cm^ 2. The microwave surface resistance has been measured as a function of temperature and DC magnetic field. The experimental results are quantitatively discussed in the framework of the Coffey and Clem theory, properly adapted to take into account the d-wave nature of cuprate superconductors. By fitting the experimental data at zero DC field, we have highlighted the effects of the induced defects in the general properties of the samples, including the intergranular region. The analysis of the results obtained at high DC fields allowed us to investigate the fluxon dynamics and deduce the depinning frequency; in particular, we show that the addition of B(2)O(3) up to 0.1 wt.% increases the effectiveness of the defects to hinder the fluxon motion induced by the microwave current.
机译:我们报告了熔融织构化的Y(1.6)Ba(2.3)Cu(3.3)O(7-x)样品的微波表面电阻,这些样品掺杂了不同量的B2O3,随后在1.476的注量下被热中子辐照。 x 10 ^ 17 cm ^ 2.已经测量了微波表面电阻与温度和直流磁场的关系。在科菲和克莱姆理论的框架下对实验结果进行了定量讨论,并适当地考虑了铜酸盐超导体的d波性质。通过在零直流磁场下拟合实验数据,我们强调了诱发缺陷对样品总体性能(包括晶间区域)的影响。通过对在高直流磁场下获得的结果的分析,我们可以研究磁通动力学并推论出钉扎频率。尤其是,我们表明,添加多达0.1 wt。%的B(2)O(3)可以提高缺陷的有效性,以阻止微波电流引起的磁通运动。

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