Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

摘要

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.