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Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys

机译:半导体电化学方法对金属和金属合金进行钝化和钝化击穿

摘要

A critical appraisal of the use of the theory of semiconductors in characterising passive films on metals and alloys is provided, with special emphasis on the use of Mott – Schottky theory for the location of characteristic energy levels of the passive film – electrolyte junction. Some inconsistencies between theory and experimental results in the case of thin passive films are discussed together with possible alternative ways for overcoming such problems. The role of semiconducting properties in determining the pitting behaviour of passive films on W in solutions containing halide is presented and discussed. The validity of a recently proposed correlation between the solid state properties of passive films and the pitting potential is critically reviewed.
机译:对使用半导体理论表征金属和合金上的钝化膜进行了严格的评估,特别强调了使用莫特-肖特基理论来确定钝化膜-电解质结的特征能级。讨论了无源薄膜情况下理论与实验结果之间的一些矛盾之处,以及解决此类问题的可能替代方法。介绍并讨论了半导体性质在确定钝化膜在含卤溶液中在W上的点蚀行为中的作用。严格审查了最近提出的无源薄膜的固态特性和点蚀电位之间相关性的有效性。

著录项

  • 作者

    DI QUARTO F; SANTAMARIA M;

  • 作者单位
  • 年度 2004
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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