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Local tunneling characteristics near a grain boundary of a d-wave superconductor as probed by a normal-metal or a low-Tc-superconductor STM tip

机译:正常金属或低Tc超导体STM探针探测的d波超导体晶界附近的局部隧穿特性

摘要

We studied the local single-particle tunneling characteristics [as observed with scanningtunnel microscopy (STM)] for N D and S D tunneling, where N is a normalmetal, S is a s-wave superconductor, and D is a d-wave superconductor witha {100} | {110} grain boundary. The tunneling Hamiltonian method was used. Theself-consistent order parameter is first determined using the quasiclassical Green'sfunctionmethod, and then the tunneling characteristics at various distances fromthe interface, reectivity of the interface, and temperature are studied. For N Dtunneling, a zero-bias conductance peak (ZBCP) occurs near the interface with diminishingmagnitude away from it. For S D tunneling, the ZBCP splits to exhibitthe gap of the s-wave low-Tc superconducting tunneling tip and there is a range ofnegative conductance just outside the peaks when the tunneling point is near thegrain boundary. The results are compared with those obtained by using a constantorder parameter in each grain.
机译:我们研究了ND和SD隧穿的局部单粒子隧穿特性[通过扫描隧道显微镜(STM)观察到],其中N是普通金属,S是s波超导体,D是d波超导体,{100 } | {110}晶界。使用隧道哈密顿方法。首先使用准经典格林函数方法确定自洽阶参数,然后研究距界面不同距离处的隧穿特性,界面的反射性和温度。对于N Dtunneling,零偏压电导峰(ZBCP)出现在界面附近,且幅度逐渐减小。对于S D隧穿,ZBCP裂开以显示s波低Tc超导隧穿尖端的间隙,并且当隧穿点接近晶粒边界时,正好在峰的外部存在一定范围的负电导。将结果与每个晶粒中使用恒定阶数参数获得的结果进行比较。

著录项

  • 作者

    Zhao Hongwei;

  • 作者单位
  • 年度 2005
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  • 原文格式 PDF
  • 正文语种 en_US
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