Short time scale thermal mechanical shock wave propagation in high performance microelectronic packaging configuration

摘要

The generalized theory of thermoelasticity was employed to characterize the coupled thermal and mechanical wave propagation in high performance microelectronic packages. Application of a Gaussian heat source of spectral profile similar to high performance devices was shown to induce rapid thermal and mechanical transient phenomena. The stresses and temporal gradient of stresses (power density) induced by the thermal and mechanical disturbances were analyzed using the Gabor Wavelet Transform (GWT). The arrival time of frequency components and their magnitude was studied at various locations in the package. Comparison of the results from the classical thermoelasticity theory and generalized theory was also conducted. It was found that the two theories predict vastly different results in the vicinity of the heat source but that the differences diminish within a larger time window. Results from both theories indicate that the rapid thermal-mechanical waves cause high frequency, broadband stress waves to propagate through the package for a very short period of time. The power density associated with these stress waves was found to be of significant magnitude indicating that even though the effect, titled short time scale effect, is short lived, it could have significant impact on package reliability. The high frequency and high power density associated with the stress waves indicate that the probability of sub-micron cracking and/or delamination due to short time scale effect is high. The findings demonstrate that in processes involving rapid thermal transients, there is a non-negligible transient phenomenon worthy of further investigation.