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Spin Dynamics in the Presence of Spin-orbit Interactions: from the Weak to the Strong Spin-orbit Coupling Regime

机译:自旋轨道相互作用存在下的自旋动力学:从弱到强自旋轨道耦合机制

摘要

We study the spin dynamics in a high-mobility two dimensional electron gas (2DEG) system with generic spin-orbit interactions (SOIs).We derive a set of spin dynamic equations which capture the purely exponential to the damped oscillatory spin evolution modesobserved in different regimes of SOI strength.Hence we provide a full treatment of the D'yakonov-Perel's mechanism by using the microscopic linear response theory from theweak to the strong SOI limit. We show that the damped oscillatory modes appear when the electron scattering time is larger than half of the spin precession time due to the SOI, in agreement with recent observations. We propose a new way to measure the scattering time and the relative strength of Rashba and linear Dresselhaus SOIs based on these modes and optical grating experiments. We discuss the physical interpretation of each of these modes in the context of Rabi oscillation.In the finite temperature, We study the spin dynamics in the presence of impurity and electron-electron (e-e) scattering in a III-V semiconductor quantum well. Starting from the Keldysh formalism, we develop the spin-charge dynamic equation at finite temperature in the presence of inelastic scattering which provide a new approach to describe the spin relaxation from the weak to the strong spin-orbit coupling (SOC) regime. In the weak SOC regime, our theory shows that when the system is near the SU(2) symmetry point, because the spin relaxation due to DP mechanism is suppressed dramatically, the spin relaxation is dominated by the Elliott-Yafet (EY) mechanism in a wide temperature regime. The non-monotonic temperature dependence of enhanced-lifetime of spin helix mode is due to the competition between the DP and EY mechanisms. In the strong SOC regime, the our theory is consistent to the previous theoretical results at zero temperature.
机译:我们研究了具有通用自旋轨道相互作用(SOI)的高迁移率二维电子气(2DEG)系统中的自旋动力学,并推导了一组自旋动力学方程,该方程捕获了在不同观察到的阻尼振荡自旋演化模式的纯指数形式。因此,我们使用微观线性响应理论(从弱到强SOI极限)对D'yakonov-Perel机理进行了全面处理。我们证明,当电子散射时间由于SOI而大于自旋进动时间的一半时,就会出现阻尼振荡模式,这与最近的观察一致。基于这些模式和光栅实验,我们提出了一种测量Rashba和线性Dresselhaus SOI的散射时间和相对强度的新方法。我们在拉比振荡的背景下讨论了每种模式的物理解释。在有限温度下,我们研究了III-V半导体量子阱中存在杂质和电子-电子(e-e)散射时的自旋动力学。从Keldysh形式主义出发,我们在存在非弹性散射的情况下,在有限温度下建立了自旋电荷动力学方程,这提供了一种描述从弱自旋轨道耦合到强自旋轨道耦合(SOC)机制的新方法。在弱SOC体制下,我们的理论表明,当系统接近SU(2)对称点时,由于DP机制引起的自旋弛豫得到了显着抑制,因此自旋弛豫主要由Elliott-Yafet(EY)机制控制。宽温度范围。自旋螺旋模式寿命的非单调温度依赖性是由于DP和EY机理之间的竞争。在强SOC条件下,我们的理论与以前在零温度下的理论结果一致。

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    Liu Xin;

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  • 年度 2012
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