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Electrodeposition of ultrathin Pd, Co and Bi films on well-defined noble-metal electrodes: studies by ultrahigh vacuum-electrochemistry (UHV-EC)

机译:在确定的贵金属电极上电沉积Pd,Co和Bi超薄薄膜:超高真空电化学(UHV-EC)研究

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摘要

Three illustrative cases involving the electrodeposition of ultrathin metalfilms of varying reactivities onto noble-metal substrates were investigated: (i) Pdon Pt(111), a noble admetal on a noble-metal surface; (ii) Bi on Pd(111), a lessnoble admetal on a noble-metal surface; and (iii) Co on polycrystalline Pd andPd(111), a reactive metal on a noble-metal surface. The interfacialelectrochemistry of these prototypical systems was characterized using acombination of electrochemical methods (voltammetry and coulometry) andultrahigh vacuum electron spectroscopies (Auger electron spectroscopy, AES;low energy electron diffraction, LEED; and X-ray photoelectron spectroscopy,XPS).Potential-controlled adsorption-desorption cycles of aqueous bromideexerted surface smoothening effects on ultrathin Pd films with defect sites(steps). This procedure, dubbed as electrochemical (EC) annealing, constituted anonthermal analogue to conventional annealing. EC-annealed ultrathin Pd filmsexhibited long-range surface order and remained free of oxygen adspecies. Pdadatoms occupying step-sites were selectively dissolved and/or rearranged toassume equilibrium positions in a well-ordered (1x1) film.Electrodeposition of Co was found to be highly surface-structuresensitive.While virtually no Co electrodeposition transpired on a clean Pd(111)surface, Co was voltammetrically deposited on (i) a Pd(111) electroderoughened by oxidation-reduction cycles; and (ii) thermally annealedpolycrystalline Pd, which is a composite of the (111) and (100) facets.Electrodeposition of Co was also observed to be kinetically hindered and slowpotential scan rates (0.1 mV/s) were required.Well-defined ultrathin Bi films were potentiostatically electrodepositedonto Pd(111); a Stranski-Krastanov growth mode was indicated. Theelectrochemical reactivity of ultrathin Bi films was characterized using twosurface probes: aqueous iodide and D-glucose. (i) Exposure of the prepared Biadlayers (????Bi 0.33) to aqueous iodide gave rise to (??????3x??????7) I-on-Bi superlattice.The same superlattice was obtained if Bi was electrodeposited ontoPd(111)(??????3x??????3)R30o-I. (ii) With respect to electrooxidation of D-glucose onPd(111), the presence of Bi adlayers inhibited the by-product-induced "surfacepoisoning" of Pd(111) but reduced its electrocatalytic efficiency.
机译:研究了三种说明性的案例,这些案例涉及将各种反应性的超薄金属膜电沉积到贵金属基材上:(i)Pdon Pt(111),贵金属表面上的贵金属; (ii)Pd(111)上的Bi,这是贵金属表面上的次贵金属。 (iii)多晶Pd和Pd(111)上的Co,这是贵金属表面上的一种活性金属。这些原型系统的界面电化学是通过电化学方法(伏安法和库仑法)和超高真空电子光谱仪(俄歇电子能谱仪,AES;低能电子衍射仪,LEED;以及X射线光电子能谱仪,XPS)的组合来表征的。水溶液的溴化解吸循环对具有缺陷部位的超薄钯薄膜的表面平滑作用(步骤)。该过程被称为电化学(EC)退火,与常规退火构成了非热模拟。经EC退火的超薄Pd膜表现出远距离的表面有序性,并且没有任何氧气。占据阶跃位置的Pdadatoms被选择性地溶解和/或重新排列以假定在有序(1x1)膜中的平衡位置.Co的电沉积被发现对表面结构高度敏感,而在纯净Pd(111)上实际上没有发生Co电沉积。在表面上,钴伏安地沉积在(i)通过氧化还原循环电粗糙化的Pd(111)上;以及(ii)热退火的多晶Pd,它是(111)和(100)面的复合物。还观察到Co的电沉积在动力学上受阻,需要慢电位扫描速率(0.1 mV / s)。将Bi膜恒电位电沉积到Pd(111)上;指出了Stranski-Krastanov的生长方式。超薄Bi膜的电化学反应性使用两个表面探针进行了表征:碘化水溶液和D-葡萄糖。 (i)将制得的双分子层(Bi 0.33)暴露于碘化水溶液中,产生(3×7)I-Bi-Bi超晶格。得到相同的超晶格。如果Bi被电沉积到Pd(111)(3×3×3)R30o-I上。 (ii)关于D-葡萄糖在Pd(111)上的电氧化,Bi添加剂的存在抑制了副产物引起的Pd(111)的“表面中毒”,但降低了其电催化效率。

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    Baricuatro Jack Hess L;

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  • 年度 2006
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