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Low voltage vertical recording preamplifier for hard disk drives

机译:硬盘驱动器的低压垂直记录前置放大器

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摘要

Higher data rate hard disk drives(HDD) and improved read channel electronics are demanding preamplifier performance be extended well beyond 1 Gb/s. Historically, preamplifier power requirements were of low priority; however, with increased demand for battery powered devices such as laptops, MP3 players, personal video recorders, andmanyother wireless hand-held devices, power consumption has become an important design parameter.Furthermore, in order to continue to increase drive capacities, new read-write head technologies(vertical recording and TGMR heads) are demanding innovative preamplifier circuitsolutions.Today's production preamplifiers possess a wide band response of 2.5 MHz-600 MHz; however next generation preamplifiers willrequire response greater than 250 KHz-1 GHz.Low corner frequencies below 250 KHz present read recovery (sleep-to-read, write-to-read, etc) challenges which can limit drive capacity. This project targets a > 2 Gb/s TGMR (tunneling giantmagneto-resistive) read path for verticalrecording HDDs. A high performance BiCMOS process (IBM's 0.5?m 5HP process)is essential due to the large transconductances, low noise and highspeed requirements of the read path's first stage. System frequency limitations at the input are a result of the large TGMR read sensor and preamplifier input capacitance. Due to read head and preamplifier manufacturingvariations, resistive feedbackaroundthe firststage is usedto seta controlled input impedance targeted to match the interconnect transmission line. Head resistance variations lead to gain variations; however, the TGMR element becomes more sensitive with larger resistance. This, to a first order approximation, acts like an automatic gain control and reduces variations in gain due to the head.
机译:更高数据速率的硬盘驱动器(HDD)和改进的读取通道电子设备要求将前置放大器的性能扩展到1 Gb / s以上。从历史上看,前置放大器的电源要求不是很重要。但是,随着对笔记本电脑,MP3播放器,个人录像机以及许多其他无线手持设备等电池供电设备的需求不断增长,功耗已成为重要的设计参数。此外,为了继续增加驱动器容量,写头技术(垂直记录和TGMR头)要求创新的前置放大器电路解决方案。当今的生产前置放大器具有2.5 MHz-600 MHz的宽带响应。然而,下一代前置放大器需要高于250 KHz-1 GHz的响应。低于250 KHz的低转折频率会带来读取恢复(从睡眠到读取,从写入到读取等)的挑战,这可能会限制驱动器容量。该项目的目标是用于垂直记录HDD的> 2 Gb / s TGMR(隧道巨磁阻)读取路径。高性能BiCMOS工艺(IBM的0.5?m 5HP工艺)至关重要,这是因为读取路径第一阶段的跨导大,噪声低以及对高速的要求。输入端的系统频率限制是大TGMR读取传感器和前置放大器输入电容的结果。由于读头和前置放大器的制造差异,在第一级附近的电阻反馈用于设置受控输入阻抗,以匹配互连传输线。磁头电阻变化导致增益变化;但是,TGMR元件在更大的电阻下变得更加敏感。在一阶近似中,其作用类似于自动增益控制,并减少了由于磁头而引起的增益变化。

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