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Enhancement of magnetostrictive properties of Galfenol thin films

机译:增强Galfenol薄膜的磁致伸缩性能

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摘要

The present study investigates the role of substrate temperatures on the structural, morphological, magnetic and magnetostrictive properties of DC sputtered FeGa thin films grown on Si substrates. These films were deposited at various substrate temperatures between 50 and 350 °C. The structural characterization of the films revealed columnar growth and the transformation of surface morphology from prismatic to spherical at high substrate temperatures. Both L12 and B2 phases of FeGa existed in the films, with the L12 phase dominating. The in-plane and out-of-plane vibration sample magnetometry measurements showed the evolution of magnetic anisotropy in these films. It was revealed from the magnetostriction measurements that the films deposited at 250 °C exhibited the maximum value of 59 ppm.
机译:本研究研究了基板温度对在Si底物上生长的DC溅射Fega薄膜的结构,形态,磁性和磁致伸缩性能的作用。将这些薄膜沉积在50至350℃之间的各种基板温度下。薄膜的结构表征揭示了高基板温度下柱状到球形的柱状生长和表面形态的转化。在薄膜中存在Fega的L12和B2阶段,其中L12相位占主导地位。平面内和平面外振动样品磁体测量显示这些薄膜中的磁各向异性的演变。从磁致伸缩测量结果揭示了沉积在250℃时的薄膜表现出最大值59ppm。

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