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Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory

机译：共价官能化二维材料中的铁电：高迁移率半导体和非易失性存储器的整合

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1. Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory [J] . Wu Menghao, Dong Shuai, Yao Kailun, Nano letters . 2016,第11期

机译：共价功能化二维材料中的铁电：高迁移率半导体与非易失性存储器的集成
2. High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels [J] . Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Advanced Materials . 2009,第42期

机译：具有铁电聚合物连接ZnO和并五苯通道的高迁移率非易失性存储薄膜晶体管
3. High-performance polymer semiconductor-based ferroelectric transistor nonvolatile memory with a self-organized ferroelectric/dielectric gate insulator [J] . Meili Xu, Xindong Zhang, Weihao Qi, Applied Physics Letters . 2021,第3期

机译：基于高性能的聚合物半导体的铁电晶体管非易失性存储器，具有自组织铁电/电介质栅极绝缘体
4. New Ferroelectrics for Naval SONAR and Modeling of Nanoscale Ferroelectric Nonvolatile Memory Materials [C] . Alexie M. Kolpak, Ilya Grinberg, Andrew M. Rappe, HPCMP Users Group Conference . 2006

机译：新的铁路声纳新铁电荷和纳米级铁电非易失性记忆材料的建模
5. Processing and characterization of ferroelectric and electrode materials for nonvolatile and dynamic random-access memories [D] . Vellaikal, Manoj 1996

机译：用于非易失性和动态随机存取存储器的铁电和电极材料的处理和表征
6. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

机译：半导体：基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器（Adv。Sci。8/2017）
7. Fabrication and Characterization of Metal–Ferroelectric (PbZr0.53Ti0.47O3)–Insulator (Dy2O3)–Semiconductor Capacitors for Nonvolatile Memory Applications [O] . C. Y. Chang 2012

机译：金属-铁电（PbZr0.53Ti0.47O3）-绝缘体（Dy2O3）-非易失性存储应用的半导体电容器的制造与表征
8. Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory [R] . Brody, P. S. 1981

机译：光伏铁电半导体非易失性存储器的研究

Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory

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