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Kinetics of the EVD process for growing thin zirconia/yttria films on porous alumina substrates

机译:用于在多孔氧化铝基底上生长薄氧化锆/氧化钇薄膜的EVD工艺的动力学

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摘要

The electrochemical vapour deposition (CVD/EVD) method has proven to be a good technique to form thin, gas tight dense solid electrolyte or mixed conducting films on porous substrates. Applications of the so formed systems are in solid oxide fuel cells (SOFC), oxygen sensors, oxygen separation membranes and electrocatalytic reactors. In this paper, experimental results on the kinetics of the deposition by the EVD method of dense zirconia-yttria layers on porous [MATH]-alumina substrates are presented, and compared with theoretical models. The experimental work concerns mainly the effect of temperature on the growth rate of the EVD film. At 1000°C, layer growth occurs linear with time under current process conditions ; in this case diffusion of the oxygen source reactant in the substrate pores is the rate limiting step for the EVD process. Between 900°C and 1000°C the growth rate limitation changes to the electrochemical transport through the film, which is parabolic with time. This behaviour is predicted by the theoretical model.
机译:电化学气相沉积(CVD / EVD)方法已经证明是在多孔基材上形成薄,气密密集的固体电解质或混合传导膜的良好技术。所形成的系统的应用是固体氧化物燃料电池(SOFC),氧传感器,氧气分离膜和电催化反应器。本文介绍了对多孔[数学] - 氧化铝基材的致密氧化锆 - ytTria层EVD方法沉积动力学的实验结果,并与理论模型进行比较。实验工作主要涉及温度对EVD薄膜生长速率的影响。在1000℃下,在电流过程条件下随时间发生直线性;在这种情况下,氧气源反应物在衬底孔中的扩散是EVD工艺的速率限制步骤。在900°C和1000°C之间,生长速率限制通过薄膜的电化学运输改变,这与时间抛物线。理论模型预测该行为。

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