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Thermal effect on dynamic R_on degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

机译：动态R _{对SIC基材P-GaN Algan / GaN Hemts降解的动态R _的热效应}

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Manqing Hu; Gengxin Liu; E Du; Feiyan Mu;
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1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications [J] . Fleury Clement, Capriotti Mattia, Rigato Matteo, Microelectronics & Reliability . 2015,第9a10期

机译：用于功率应用的SiC和Si衬底上常关p-GaN栅极AlGaN / GaN HEMT的高温性能
3. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy [J] . Yang Song, Huang Sen, Wei Jin, IEEE Electron Device Letters . 2020,第5期

机译：深层瞬态光谱法识别P-GAN / ALGAN / GAN电源HEMT结构的P-GaN层中的捕集状态
4. Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC [J] . Florian C., Santarelli A., Cignani R., Microwave Theory and Techniques, IEEE Transactions on . 2013,第5期

机译：SiC上AlGaN-GaN HEMT的非线性热阻和脉冲热动力学行为
5. Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping detrapping dynamics of hole/electron [C] . Yuanyuan Shi, Qi Zhou, Wei Xiong, International Symposium on Power Semiconductor Devices and ICs . 2019

机译：长期正向栅极应力后p-GaN AlGaN / GaN HEMT中自恢复栅极退化的观察：空穴/电子的俘获和去俘获动力学
6. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
7. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
8. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散

Thermal effect on dynamic Ron degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

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Thermal effect on dynamic R_on degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates