首页> 外文OA文献 >High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

【2h】

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

机译：采用NbalON作为高k栅介质的高性能Gaas金属氧化物半导体电容器

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
L. N. Liu; H. W. Choi; J. P. Xu; P. T. Lai;
展开▼
作者单位

展开▼
年度 2017
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. High-performance GaAs metal-oxide-semiconductor capacitor by using NbAION as high-k gate dielectric [J] . L. N. Liu, H. W. Choi, J. P. Xu, Applied Physics Letters . 2017,第12期

机译：NbAION作为高k栅极电介质的高性能GaAs金属氧化物半导体电容器
2. Wide-bandgap high-k Y_2O_3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric [J] . C. X. Li, P. T. Lai Applied Physicsletters . 2009,第2期

机译：宽带隙高k Y_2O_3作为钝化中间层，用于增强具有高k HfTiO栅极电介质的n-Ge金属氧化物半导体电容器的电性能和高场可靠性
3. Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics [J] . Zhao P., Vyas P. B., McDonnell S., Microelectronic Engineering . 2015,第NOVa1期

机译：具有高k电介质的顶栅二硫化钼金属氧化物半导体电容器的电学特性
4. The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor with High-K Dielectric Gate Stack [C] . Fatimah A. Noor, Yudi Darma, Mikrajuddin Abdullah, Asian Physics Symposium . 2010

机译：高k电介质栅极堆叠的各向异性金属氧化物半导体电容中透射率与隧道电流的影响
5. Electron tunneling spectroscopy of silicon metal-oxide-semiconductor system with various high-k gate dielectrics. [D] . Wang, Miaomiao. 2008

机译：具有各种高k栅极电介质的硅金属氧化物半导体系统的电子隧穿光谱。
6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure [O] . Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, 2012

机译：具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
7. Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor [O] . Xu JP, Zou X, Lai PT, 2007

机译：通过水蒸气退火抑制具有高k栅极电介质的Ge金属氧化物半导体电容器中不稳定的低fr GeOx中间层的生长

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

著录项

引文网络

相似文献

相关主题

期刊订阅