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Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

机译：直接测量4H-SiC MOS电容器强累积区域中的有源近接口陷阱

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Peyush Pande; Sima Dimitrijev; Daniel Haasmann; Hamid Amini Moghadam; Philip Tanner; Jisheng Han;
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1. Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-SiC MOS Capacitors [J] . Pande Peyush, Dimitrijev Sima, Haasmann Daniel, IEEE Transactions on Electron Devices . 2019,第4期

机译：在4H-SiC MOS电容器的强累积区域中活跃的能量局部近界面陷阱
2. Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs [J] . Moghadam Hamid Amini, Dimitrijev Sima, Han Jisheng, Electron Devices, IEEE Transactions on . 2015,第8期

机译：测量4H-SiC MOS电容器和MOSFET中有源近界面氧化物陷阱的瞬态电流方法
3. A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors [J] . Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Materials science forum . 2019,第期

机译：近界面陷阱在4H-SIC MOS电容中的温度独立效果
4. Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors By Transient Capacitance Measurements [C] . Yuki Fujino, Koji Kita Semiconductors, dielectrics, and metals for nanoelectronics 13 . 2015

机译：通过瞬态电容测量定量表征4H-SiC MOS电容器中近界面氧化物陷阱
5. Development of an algorithm of bidirectional surface strain measurements from soft elastomeric capacitors. [D] . Wu, Jingzhe. 2014

机译：软弹性电容器双向表面应变测量算法的发展。
6. Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms [O] . Dongxun Li, Yuming Zhang, Xiaoyan Tang, 2020

机译：5 MeV质子辐射对氮化SiO2 / 4H-SiC MOS电容的影响及相关机制
7. Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures [O] . Avice, Marc, Grossner, Ulrike, Pintilie, Ioana, 2006

机译：al $ _2 $ O $ _3 $ / 4H-siC和al的近界陷阱比较 al $ _2 $ O $ _3 $ / siO $ _2 $ / 4H-siC结构

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

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