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Study of surface properties of ATLAS12 strip sensors and their radiation resistance

机译:ATLAS12条形传感器的表面特性及其抗辐射性的研究

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摘要

A radiation hard n$^+$-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics.Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10$^{16}$ n$_{eq}$/cm$^2$, by reactor neutron fluence of 1×10$^{15}$ n$_{eq}$/cm$^2$ and by gamma rays from $^{60}$Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.
机译:“ ATLAS ITk”开发了一种辐射硬n $ ^ + $-in-p微带传感器,用于在高光度大强子对撞机(HL-LHC)上升级ATLAS实验的条带跟踪仪。传感器是由Hamamatsu Photonics生产的。最新型传感器设计ATLAS12的不同类型的端盖和镜筒微型传感器的表面特性已在辐照前后进行了研究。经过测试的桶形传感器的“穿通保护”(PTP)结构有所不同,端盖传感器的立体条纹在风扇的几何形状,带间距和边缘带组合选项方面有所不同。反应堆中子注量为1×10 $ ^ {15} $ n $ _,质子注量高达1×10 $ ^ {16} $ n $ _ {eq} $ / cm $ ^ 2 $。 {eq} $ / cm $ ^ 2 $以及从$ ^ {60} $ Co起的伽马射线,直至剂量为1 MGy。本研究的主要目的是表征用于微放电击穿电压估计的漏电流,带间电阻和电容,偏置电阻以及PTP结构的有效性,该函数是偏置电压和注量的函数。已经证实,ATLAS12传感器具有远高于工作电压的高击穿电压,这意味着传感器的不同几何形状不会影响其稳定性。条带间隔离是辐射通量的强大功能,但是在HL-LHC的预期范围内,传感器性能是可以接受的。即使在测试辐射通量最高的情况下,新型门控PTP结构仍具有较低的PTP起始电压和有效电阻的急剧截止。条间电容符合辐照前所需的技术规格,并且未观察到辐射引起的退化。给出了ATLAS12传感器测试的摘要,其中包括来自不同照射位置的结果的比较。将测得的特性与传感器设计的先前原型ATLAS07进行比较。

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