首页> 外文OA文献 >Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn_0.04Cd_0.96Te, Zn_0.1Cd_0.9Te and Cd_0.2Hg_0.8Te semiconductors

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Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn_0.04Cd_0.96Te, Zn_0.1Cd_0.9Te and Cd_0.2Hg_0.8Te semiconductors

机译：具有CDTE的HNO _{3 -hi-柠檬酸水溶液的相互作用，Zn _{0.04 Cd _{0.96 Te，Zn _{0.1 CD _{0.9 TE和CD _{0.2 hg _{0.8 TE半导体}}}}}}}

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Ye.Ye. Hvozdiyevskyi;
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1. Structural, electrical, and optical property studies of indium-doped Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te heterostructures [J] . M.S. Han, T.W. Kang Journal of Materials Research . 1999,第7期

机译：铟掺杂Hg_0.8Cd_0.2Te / Cd_0.96Zn_0.04Te异质结构的结构，电学和光学性质研究
2. Interdiffusion Behavior of Hg in HgTe/CdTe Superlattices Grown on Cd↓(0.96)Zn↓(0.04)Te (211)B Substrates by Molecular Beam Epitaxy [J] . M.S. HAN, S.R. HAHN, H.C. KWON Journal of Electronic Materials . 1998,第1a6期

机译：汞在Cd↓（0.96）Zn↓（0.04）Te（211）B衬底上生长的HgTe / CdTe超晶格中Hg的分子扩散外延行为
3. Interdiffusion Behavior of Hg in HgTe/CdTe Superlattices Grown on Cd_0.96Zn_0.04Te (211 )B Substrates by Molecular Beam Epitaxy [J] . M.S.HAN, S.R. HAHN, H.C. KWON Journal of Electronic Materials . 1998,第6期

机译：汞在Cd_0.96Zn_0.04Te（211）B衬底上生长的HgTe / CdTe超晶格中Hg的分子扩散外延行为
4. Photosensitivity of SnO_2/Cd_(0.8)Zn_(0.2)S_(0.1)Se_(0.9)/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum [C] . H. M. Mamedov, S. I. Amirova International Conference on Photoelectronics and Night Vision Devices . 2007

机译：SnO_2 / CD_（0.8）Zn_（0.2）S_（0.1）SE_（0.9）/ P-CDTE / Cu异质结的光敏性，可见和近红外频谱附近
5. Characterization of secondary phases in Cd0.9Zn 0.1Te detector grade semiconductor by IR transmission microscope and implementation of ampoule rotation technique in modified vertical Bridgman growth to minimize the secondary phases. [D] . Bhaladhare, Sachin. 2013

机译：通过红外透射显微镜对Cd0.9Zn 0.1Te检测器级半导体中的第二相进行表征，并在改进的垂直Bridgman生长中实施安瓿旋转技术以最小化第二相。
6. Synthesis of Aqueous CdTe/CdS/ZnS Core/shell/shell Quantum Dots by a Chemical Aerosol Flow Method [O] . Chuanmiao Yan, Fangqiong Tang, Linlin Li, 2010

机译：化学气溶胶流动法合成CdTe / CdS / ZnS核/壳/壳量子点水溶液
7. Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te [O] . He, L., Becker, Charles R., Bicknell-Tassius, R. N., 2009

机译：（100）Cd \（_ {0.96} \）Zn \（_）上的分子束外延生长和本征和外在掺杂（100）Hg \（_ {0.8} \）Cd \（_ {0.2} \）Te的评估{0.04} \）Te
8. MBE (Molecular Beam Epitaxial) Growth Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices: Quarterly Report, June 15, 1987 [R] . Faurie, J. P. 1987

机译：HgCdTe，HgZnTe，相关异质结和HgCdTe-CdTe超晶格的mBE（分子束外延）生长表征和电子器件加工：季度报告，1987年6月15日

Interaction of HNO3-HI-citric acid aqueous solutions with CdTe, Zn0.04Cd0.96Te, Zn0.1Cd0.9Te and Cd0.2Hg0.8Te semiconductors

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Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn_0.04Cd_0.96Te, Zn_0.1Cd_0.9Te and Cd_0.2Hg_0.8Te semiconductors