首页> 外文OA文献 >Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

【2h】

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

机译：III-V半导体的离子束纳米透视图：化学驱动理论中的实验性和仿真趋势的一致性

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
O. El-Atwani; S. A. Norris; K. Ludwig; S. Gonderman; J. P. Allain;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory [J] . O. El-Atwani, S. A. Norris, K. Ludwig, Scientific reports. . 2015,第1期

机译：III-V半导体的离子束纳米图案化：化学驱动理论中实验和模拟趋势的一致性
2. Simulation of mesa structures for III-V semiconductors under ion beam etching [J] . L. Houlet, A. Rhallabi, G. Turban The European physical journal. Applied physics . 1999,第3期

机译：离子束刻蚀下III-V族半导体台面结构的仿真
3. Effect of Intense Electric Field on the Debye Screening Length in III-V, Ternary and Quaternary Semiconductors: Simplified Theory, Relative Assessment and Suggestion for Experimental Determination [J] . S. M. Adhikari, K. P. Ghatak Quantum Matter . 2015,第6期

机译：强电场对III-V，三元和四元半导体中德比屏蔽长度的影响：简化的理论，相对评估和实验确定的建议
4. Enhanced Aspect Ratio of Focused Ion Beam Nanopatterning Technique in Semiconductors [C] . Alex Hayat, Alex Lahav, Meir Orenstein Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：增强聚焦离子束纳米透视技术在半导体中的纵横比
5. Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors. [D] . Forbes, David Vincent. 1995

机译：金属有机化学气相沉积，离子束混合和III-V半导体的选择性外延。
6. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory [O] . O. El-Atwani, S. A. Norris, K. Ludwig, -1

机译：III-V半导体的离子束纳米图案化：化学驱动理论中实验和模拟趋势的一致性
7. Fabrication of Complex Micro/Nanopatterns on Semiconductors by the Multi-beam Interference of Femtosecond Laser [O] . Jia Xin, Dong Lingling 2014

机译：飞秒激光的多光束干涉在半导体上制备复杂的微/纳米图案
8. Monte-Carlo Simulations of MBE (Molecular Beam Epitaxy) Growth of III-V Semiconductors: The Growth Kinetics, Mechanism, and Consequences for the Dynamics of RHEED Intensity [R] . Ghaisas, S. V., Madhukar, A. 1985

机译：monte-Carlo模拟mBE（分子束外延）III-V半导体的生长：RHEED强度动力学的生长动力学，机制和后果

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

著录项

引文网络

相似文献

相关主题

期刊订阅