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Multi-step interrupted-growth MBE technology for GaAs/AlGaAs ($~$9.4 $mu$m) room temperature operating quantum-cascade lasers

机译：GaAs / AlGaAs（$ 〜$ 9.4 $ mu $ m）室温工作量子级联激光器的多步中断生长MBE技术

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Kosiel K.; Kubacka-Traczyk J.; Sankowska I.; Szerling A.; Gutowski P.; Bugajski M.;
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年度 2012
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1. Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (~9.4 μm) room temperature operating quantum-cascade lasers [J] . Kosiel K., Kubacka-Traczyk J., Sankowska I., Opto-electronics review . 2012,第3期

机译：GaAs / AlGaAs（〜9.4μm）室温工作量子级联激光器的多步中断生长MBE技术
2. High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures [J] . Sin Y.K., Horikawa H. Electronics Letters . 1992,第8期

机译：高功率，单模InGaAs-GaAs-AlGaAs应变量子阱激光器，采用新的电流阻挡方案，使用MBE在低衬底温度下生长的GaAs层
3. GaAs/AlGaAs (~9.4 μm) quantum cascade lasers operating at 260 K [J] . A. Szerling, A. Trajnerowicz, D. Pier?cińska, Bulletin of the Polish Academy of Sciences. Technical Sciences . 2011,第4期

机译：GaAs / AlGaAs（〜9.4μm）量子级联激光器，工作于260 K
4. MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers [C] . S, M. Helm, A. Muecklich, International conference on molecular beam epitaxy . 2001

机译：MBE-生长的GaAs / Algaas和紧张的Ingaas / Algaas / Gaas Quantum Cascade激光器
5. High operating temperature of passively mode-locked InGaAsP/InP semiconductor lasers [D] . Tan, Wei Kiong. 2005

机译：被动锁模InGaAsP / InP半导体激光器的高工作温度
6. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE [O] . Riaz H Mari, Muhammad Shafi, Mohsin Aziz, 2011

机译：MBE在（100）和（311）A GaAs衬底上生长的Be掺杂AlGaAs中深层缺陷的电学表征
7. Spectroscopy of GaAs/AlGaAs Quantum-Cascade Lasers Using Hydrostatic Pressure [O] . Jin, S R, Ahmad, C N, Sweeney, S J, 2006

机译：GaAs / AlGaAs量子级联激光器的静水压光谱
8. Comparison of Low Temperature Photoluminescence of Bulk MBE (Molecular Beam Epitaxy) Grown AlGaAs and GaAs Using a Graphite Generated Dimer Versus a Standard Tetramer Arsenic Group-V Source [R] . Brennan, T. M. , Hammons, B. E. , Smith, M. C. , 1987

机译：使用石墨生成的二聚体与标准四聚体砷基团-V源的大块mBE（分子束外延）生长的alGaas和Gaas的低温光致发光的比较

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs ($~$9.4 $mu$m) room temperature operating quantum-cascade lasers

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