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A New Mathematical Model for Cluster Calculation in Tetrahedrally Bonded Amorphous Semiconductors

机译：四面体粘合非晶半导体中簇计算的新数学模型

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M. A. Grado Caffaro; M. Grado Caffaro;
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年度 1993
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1. A New Mathematical Model for Cluster Calculation in TetrahedrallyBonded Amorphous Semiconductors [J] . M. A. GradoCaffaro, M. GradoCaffaro Active and passive electronic components . 1993,第1期

机译：四面体键合非晶半导体簇计算的新数学模型
2. A matrix model for optical transitions in amorphous tetrahedrally bonded semiconductors [J] . Grado-Caffaro MA., Grado-Caffaro M. Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2000,第3期

机译：非晶四面体键合半导体中光学跃迁的矩阵模型
3. Origin of photoluminescence in tetrahedrally-bonded amorphous semiconductors and amorphous chalcogenides [J] . Aoki T Journal of optoelectronics and advanced materials . 2009,第9期

机译：四面键结合的非晶半导体和非晶硫族化物中光致发光的起源
4. Magnetic Resonance Probes Of Band Tail States And Defects In Tetrahedrally Coordinated Amorphous Semiconductors [C] . P. C. Taylor Symposium on Amorphous and Heterogeneous Silicon-Based Films―2002, Apr 2-5, 2002, San Francisco, California . 2002

机译：四面体配位非晶半导体中带尾态和缺陷的磁共振探针
5. DRIFT TYPE PHOTOVOLTAIC PROCESS IN TETRAHEDRALLY-BONDED AMORPHOUS SEMICONDUCTORS [D] . 野々村, 修一 1984

机译：四面键结合的非晶态半导体中的漂移型光电过程
6. Magnetic Properties of Monomer and Dimer Tetrahedral VOx Entities Dispersed on Amorphous Silica-based Materials: Prediction of EPR Parameters from Relativistic DFT Calculations and Broken Symmetry Approach to Exchange Couplings [O] . Piotr Pietrzyk, Zbigniew Sojka -1

机译：分散在非晶硅基材料上的四聚体和二聚体四面体VOx实体的磁性能：从相对论DFT计算和交换耦合的不对称对称方法预测EPR参数
7. Ab initio bond self-interaction correction calculation of tetrahedrally bonded semiconductors and its application to superlattices by the most localized linear muffin-tin orbital method [O] . Hatsugai Yasuhiro, Fujiwara Takeo 1988

机译：四面体键合半导体的从头算键自相互作用校正计算及其在最局部线性松饼-锡轨道方法中的应用
8. Calculation of the Energy Gap in Tetrahedrally Bonded Amorphous Solids [R] . Zhu Wei-jia 1983

机译：四面体键合非晶态固体能隙的计算

A New Mathematical Model for Cluster Calculation in Tetrahedrally Bonded Amorphous Semiconductors

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