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Organic Field-Effect Transistor Devices Based on Latent Pigments of Unsubstituted Diketopyrrolopyrrole or Quinacridone

机译:基于未取代二酮吡咯并吡啶或喹吖啶酮潜在颜料的有机场效应晶体管器件

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摘要

Organic field-effect transistors (FETs) based on unsubstituted diketopyrrolopyrrole (DPP) or quinacridone (QA) have been fabricated using their solvent-soluble precursors called latent pigments (t-BOC DPP and t-BOC QA) which can also be regenerated into their parent pigments by heating at about 200 °C. The use of latent pigments enables us to fabricate FETs by spin coating, offering a low-cost fabrication process rather than an expensive vacuum technology. The objective of the present investigation is to evaluate the performance of DPP- and QA-based FETs prepared using latent pigments. As a result, field effect mobilities of about 7.19×10-6 and 8.23×10-6 cm2 V-1 s-1 are obtained for FETs based on t-BOC DPP and QA, respectively. These values are almost equivalent to those of FETs prepared by the vacuum deposition of DPP and QA, namely 1.43×10-5 and 1.08×10-5 cm2 V-1 s-1, respectively. The present result leads us to conclude that latent pigment technology is an excellent low-cost process fabricating organic FETs.
机译:基于未取代的二酮吡咯(DPP)或喹吖啶酮(QA)的有机场效应晶体管(FET)使用称为潜在颜料(T-BOC DPP和T-BOC QA)的溶剂可溶性前体制造,该溶剂可溶性前体也可以再生成它们通过在约200℃下加热母体颜料。潜在颜料的使用使我们能够通过旋涂制造FET,提供低成本的制造工艺而不是昂贵的真空技术。本研究的目的是评估使用潜在颜料制备的DPP和QA的FET的性能。结果,基于T-BOC DPP和QA的FET获得了大约7.19×10-6和8.23×10 -6cm 2 V-1S-1的场效应迁移率。这些值几乎相当于通过DPP和QA的真空沉积而制备的FET,即1.43×10-5和1.08×10-5cm 2 V-1 S-1的真空沉积。目前的结果导致我们得出结论,潜在颜料技术是制造有机FET的优异低成本过程。

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