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Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

机译:氮化硅膜上的低噪声高Tc超导辐射热测量计,用于远红外探测

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摘要

High-Tc GdBa2Cu3O7 – delta superconductor bolometers with operation temperatures near 89 K, large receiving areas of 0.95 mm2 and very high detectivity have been made. The bolometers are supported by 0.62 µm thick silicon nitride membranes. A specially developed silicon-on-nitride layer was used to enable the epitaxial growth of the high-Tc superconductor. Using a gold black absorption layer an absorption efficiency for wavelengths between 70 and 200 µm of about 83% has been established. The noise of the best devices is fully dominated by the intrinsic phonon noise of the thermal conductance G, and not by the 1/f noise of the superconducting film. The temperature dependence of the noise and the resulting optimum bias temperature have been investigated. In the analysis the often neglected effect of electrothermal feedback has been taken into account. The minimum electrical noise equivalent power (NEP) of a bolometer with a time constant tau of 95 ms is 2.9 pW/Hz1/2 which corresponds with an electrical detectivity D* of 3.4 × 1010 cm Hz1/2/W. Similar bolometers with tau = 27 ms and NEP = 3.8 pW/Hz1/2 were also made. No degradation of the bolometers could be observed after vibration tests, thermal cycling and half a year storage. Measurements of the noise of a Pr doped YBa2Cu3O7 – delta film with Tc = 40 K show that with such films the performance of air bridge type high-Tc bolometers could be improved.
机译:高TC GDBA2CU3O7 - 具有操作温度的Δ超导钻孔仪,靠近89 k,大容量区域为0.95mm2,探测器非常高。钻孔器由0.62μm厚的氮化硅膜支撑。使用特殊开发的硅 - 氮化物层来实现高TC超导体的外延生长。使用金黑吸收层的吸收效率为70至200μm的约83%的波长。最佳器件的噪声完全由导热率G的内在声子噪声主导,而不是超导膜的1 / F噪声。研究了噪声的温度依赖性和所得到的最佳偏置温度。在分析中,已经考虑了电热反馈的经常被忽视的效果。具有95毫秒的时间常数TAU的电荷计​​的最小电噪声等效功率(NEP)是2.9 PW / HZ1 / 2,其电气检测率D *为3.4×1010cm Hz1 / 2 / w。还制造了与Tau = 27毫秒的类似钻头= 3.8 pw / hz1 / 2。在振动测试,热循环和半年储存后,可以观察到钻孔计的劣化。具有Tc = 40k的PR掺杂YBA2Cu3O7 - Delta膜的噪声的测量表明,通过这种薄膜可以提高空气桥型高TC钻孔仪的性能。

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