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Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

机译：高度应变的III-V-V型同轴纳米线量子孔，具有强大的载体限制

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Yunyan Zhang; George Davis; H. Aruni Fonseka; Anton Velichko; Anders Gustafsson; Tillmann Godde; Dhruv Saxena; Martin Aagesen; Patrick W. Parkinson; James A. Gott; Suguo Huo; Ana M. Sanchez; David J. Mowbray; Huiyun Liu;
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1. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement [J] . Zhang Yunyan, Davis George, Fonseka H. Aruni, ACS nano . 2019,第5期

机译：高度应变的III-V-V同轴纳米线量子孔，具有强大的载体限制
2. Towards highly efficient photoanodes: the role of carrier dynamics on the photoelectrochemical performance of InGaN/GaN multiple quantum well coaxial nanowires [J] . Ebaid Mohamed, Kang Jin-Ho, Lim Seung-Hyuk, RSC Advances . 2015,第30期

机译：迈向高效光阳极：载流子动力学对InGaN / GaN多量子阱同轴纳米线光电化学性能的作用
3. Confinement behaviors of charge carriers in strained CdTe-ZnTe single-quantum wells [J] . Tit N, Obaidat IM Physica, E. Low-dimensional systems & nanostructures . 2008,第1期

机译：CdTe-ZnTe单量子阱中电荷载流子的约束行为
4. QUANTUM DEVICES AND INTEGRATED CIRCUITS BASED ON QUANTUM CONFINEMENT IN III-V NANOWIRE NETWORKS CONTROLLED BY NANO-SCHOTTKY GATES [C] . Hideki Hasegawa International Symposium on Quantum Confinement VI: Nanostructured Materials and Devices, Sep 5-6, 2001, San Francisco, CA . 2001

机译：纳米肖特基门控制的III-V纳米网络中基于量子约束的量子设备和集成电路
5. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in strained silicon germanium nanolayers for heterojunction bipolar transistors. [D] . Enicks, Darwin Gene. 2007

机译：在异质结双极晶体管的应变硅锗纳米层中研究碳分布，以增强硼的含量并改善载流子的传输。
6. Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD [O] . Kazuma Ito, Weifang Lu, Naoki Sone, 2020

机译：MoCVD的单片生长同轴增益/ GaN多量子壳纳米线的研制
7. Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement [O] . Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka, 2021

机译：无缺陷的轴向堆叠GaAs / GaASP纳米线量子点，具有强大的载体限制
8. Very High Efficiency GaInAsP/GaAs Strained-Layer Quantum Well Lasers(Lambda=980nm) With GaInAsP Optical Confinement Layers. (Reannouncement with New Availability Information) [R] . Groves, S. H., Walpole, J. N., Missaggia, L. J. 1992

机译：具有GaInasp光学限制层的超高效GaInasp / Gaas应变层量子阱激光器（Lambda = 980nm）。（重新公布新的可用性信息）

Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

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