首页> 外文OA文献 >Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

【2h】

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

机译：等离子体辅助分子束外延用Mg的新氮化物合金的合成

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Iulian Gherasoiu; Kin Man Yu; Huseyin Ekinci; Bo Cui; Michael Hawkridge; Vladimir Kuryatkov; Matthew Gaddy; Sergey A. Nikishin; Wladek Walukiewicz;
展开▼
作者单位

展开▼
年度 2020
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy [J] . T. Yodo, T. Nakamura, T. Kouyama, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：电子回旋共振等离子体辅助分子束外延对Si（111）衬底上生长的六角形InN晶体薄膜中残余氧杂质，立方氧化铟晶粒和氮氧化铟合金晶粒的影响
2. Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates [J] . T Swietlik, G Franssen, C Skierbiszewski, Semiconductor science and technology . 2007,第7期

机译：金属有机气相外延和等离子体辅助分子束外延在块状GaN衬底上生长的III族氮化物激光结构的增益比较
3. Comparison of gain in group-Ⅲ-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates [J] . T Swietlik, G Franssen, C Skierbiszewski, Semiconductor science and technology . 2007,第7期

机译：金属有机气相外延和等离子体辅助分子束外延在块状GaN衬底上生长的Ⅲ族氮化物激光结构的增益比较
4. The growth of boron nitride on poly-crystalline Ni by plasma-assisted molecular beam epitaxy [C] . Wei-Cyuan Huang, Chia-Wei Huang, Sheng-Chung Chen, Compound Semiconductor Week . 2019

机译：等离子体辅助分子束外延在多晶镍上生长氮化硼
5. Growth of (indium,aluminum)gallium nitride alloys by RF-plasma assisted molecular beam epitaxy for application in high electron mobility transistor structures. [D] . Poblenz, Christiane. 2005

机译：通过射频等离子体辅助分子束外延生长（铟，铝）氮化镓合金，以用于高电子迁移率晶体管结构。
6. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy [O] . Zhongguang Xu, Hao Tian, Alireza Khanaki, -1

机译：等离子体辅助分子束外延在抛光钴箔上大面积生长多层六方氮化硼
7. Liquid-Metal-Enabled Synthesis of Aluminum-Containing III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy [O] . Liang, Yu-Han, Nuhfer, T., Towe, Elias 2016

机译：液相金属法合成含铝的III族氮化物等离子体辅助分子束外延

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

著录项

引文网络

相似文献

相关主题

期刊订阅