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Influence of Crystallization Time on Energy-Storage Density and Efficiency of Lead-Free Bi0.5(Na0.8K0.2)0.5TiO3 Thin Films

机译:结晶时间对无铅Bi0.5(Na0.8K0.2)0.5tio3薄膜蓄能密度和效率的影响

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摘要

Lead-free Bi0.5(Na0.80K0.20)0.5TiO3 (BNKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via chemical solution deposition. The influence of crystallization time on the microstructures and ferroelectric and energy-storage properties of the films was investigated in detail. The XRD analysis showed that the BNKT films have well crystallized corresponding to the single-phase perovskite structure at 700°C. Ferroelectric and energy-storage properties of the films were significantly enhanced by increasing crystallization time. With crystallization time of 60 min, the remnant polarization (Pr), maximum polarization (Pm), and Pm-Pr values reached the highest values of 7.9 µC/cm2, 28.9 µC/cm2, and 21.0 µC/cm2, respectively, under the electric field of 400 kV/cm. Thanks to the strong enhancement in Pm and the large Pma-Pr value, the highest recoverable energy-storage density (Jreco) gets the value of 2.9 J/cm3. The obtained results indicate that the BNKT films have application potentials in advanced capacitors.
机译:通过化学溶液沉积在Pt / Ti / SiO 2 / Si基材上合成无铅Bi0.5(Na0.80k0.20)0.5tio3(BNKT)铁电薄膜。详细研究了结晶时间对微观结构和铁电和能量储存性能的影响。 XRD分析表明,BNKT薄膜在700℃下对应于单相钙钛矿结构良好结晶。通过增加结晶时间显着提高膜的铁电和能量储存性能。结晶时间为60分钟,剩余偏振(PR),最大偏振(PM)和PM-PR值分别达到7.9μC/ cm2,28.9μC/ cm 2和21.0μC/ cm2的最高值电场400 kV / cm。由于PM和大的PMA-PR值的强大增强,最高可恢复的能量存储密度(Jreco)获得2.9J / cm3的值。所获得的结果表明BNKT薄膜具有先进电容器中的应用电位。

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