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On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices

机译：晶圆I / V测量设置，用于在电子器件中表征低频分散

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A. Raffo; A. Santarelli; P.A. Traverso; G. Vannini; F. Filicori;
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年度 2004
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1. Wideband on-wafer noise measurement setup for noise characterization of active devices in the low VHF band [J] . Roux J.-P., Escotte L. IEEE Transactions on Instrumentation and Measurement . 1997,第5期

机译：宽带晶圆上噪声测量设置，用于在低VHF频带中表征有源器件的噪声
2. A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices [J] . Antonio Raffo, Valeria Vadala, Pier Andrea Traverso, Computer standards & interfaces . 2011,第2期

机译：面向微波电子器件低频色散经验表征的双源非线性测量系统
3. An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices [J] . Florian, C., Traverso, IEEE Transactions on Instrumentation and Measurement . 2013,第10期

机译：有源偏置网络用于表征大功率微波电子设备中的低频色散
4. On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices [C] . A. Raffo, A. Santarelli, P. A. Traverso, Automatic RF Techniques Group Conference . 2004

机译：晶圆I / V测量设置，用于在电子器件中表征低频分散
5. Wavelength-dependent polarization dependent loss and polarization mode dispersion measurements in fiber-optic devices. [D] . Zhu, Yihong. 1999

机译：光纤设备中与波长相关的偏振相关损耗和偏振模式色散测量。
6. Measurements of patient’s setup variation in intensity-modulated radiation therapy of head and neck cancer using electronic portal imaging device [O] . N Naiyanet, S Oonsiri, C Lertbutsayanukul, 2007

机译：使用电子门禁成像设备测量头颈癌强度调制放射疗法中患者设置的变化
7. On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devicesudud [O] . Raffo A., Santarelli A., Traverso P.A., 2004

机译：晶圆上I / V测量设置，用于表征电子设备中的低频色散 ud ud
8. On-wafer, cryogenic characterization of ultra-low noise HEMT devices [R] . Bautista, J. J., Laskar, J., Szydlik, P. 1995

机译：超低噪声HEmT器件的晶圆上低温特性

On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices

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