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Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes

机译:金属绝缘体 - 半导体异质结构的偏置可调谐光电流,碳纳米管增强光响应

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摘要

Metal-insulator-semiconductor-insulator-metal (MISIM) heterostructures, with rectifying current-voltage characteristics and photosensitivity in the visible and near-infrared spectra, are fabricated and studied. It is shown that the photocurrent can be enhanced by adding a multi-walled carbon nanotube film in the contact region to achieve a responsivity higher than 100   mA   W − 1 under incandescent light of 0.1   mW   cm − 2 . The optoelectrical characteristics of the MISIM heterostructures are investigated at lower and higher biases and are explained by a band model based on two asymmetric back-to-back Schottky barriers. The forward current of the heterojunctions is due to majority-carrier injection over the lower barrier, while the reverse current exhibits two different conduction regimes corresponding to the diffusion of thermal/photo generated carriers and majority-carrier tunneling through the higher Schottky barrier. The two conduction regimes in reverse bias generate two plateaus, over which the photocurrent increases linearly with the light intensity that endows the detector with bias-controlled photocurrent.
机译:金属绝缘体 - 半导体绝缘体 - 金属(MISIM)异质结构,并在可见和近红外光谱中整流电流 - 电压特性和光敏性,并进行研究。结果表明,通过在接触区域中添加多壁碳纳米管膜可以通过在0.1mm-2的白炽灯下实现高于100mA W - 1的响应度来提高光电流。在较低且较高的偏差下研究了杂种异质结构的光电特性,并通过基于两个不对称的背靠背肖特基屏障的带模型解释。异质谐波的前电流是由于较低屏障上的多数载流子喷射,而反向电流对应于热/光产生的载体和多数载波隧道的扩散相对应的两种不同的传导方案,通过更高的肖特基屏障。反向偏压中的两个传导制度产生两个平台,在该平台上,光电流随着偏压控制的光电流而赋予检测器的光强度。

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