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Memtransistors Based on Non-Layered In2S3 Two-Dimensional Thin Films With Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

机译：基于非分层IN2S3二维薄膜的膜体，具有光学调制的多级电阻状态和栅极可调人工突触塑性

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Yu Zhao; Daizhe Yu; Zhen Liu; Shanjie Li; Zhiyuan He;
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3. Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors [J] . Yang Yi, Wen Juan, Guo Liqiang, ACS applied materials & interfaces . 2016,第44期

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Memtransistors Based on Non-Layered In2S3 Two-Dimensional Thin Films With Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

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